ICP etcher 1(Reactive lon Etching Equipment)

• Model（GSE-C200）and company (NAURA, 北方华创), Location (Cleanroom)

   Superuser (Jingjing Lu/Qinke Wu), contacts (15377533309/wechat ID: miaomer_777、18428381656/wechat ID: wuqinke122832)

• Brief description: 

   The etcher GSE-C200 is specifically designed for micro-nano processing of insulating materials such as silicon dioxide and silicon nitride. Its primary applications include: Advanced Logic Chips: Reactive ion etching of gate spacers in FinFET/GAA devices, Memory Chips: High aspect ratio etching of 3D NAND memory channels, Heterogeneous Integration: Wafer-level reactive ion processing of TSV isolation layers.

• Specifications: 

    -Wafer size: <8’

    -Gas lines: 8 gas lines, including Ar/O₂/CF₄/SF₆/CHF₃/He/C₄F₆/N₂( or Cl2)

    -Etching Materials: SiO2, SiN, Polymer, III-V and etc.

    -RF generator: Top electode：13.56 MHz, 1500W-bottom electrode：13.56 MHz, 300W

    -Uniformity: uniformity：±5%