Investigating vdW layered magnetic semiconductors that exhibit stable ferromagnetism above room temperature, enabling ultralow-power spintronic devices. We have We have successfully demonstrated that vanadium (V)-doped WSe₂ functions as a dilute magnetic semiconductor (DMS) at room temperature, marking a major milestone in the development of spintronic devices. Our research suggests that applying a small vertical voltage can effectively control spin switching, offering a promising route toward ultralow-power spintronic applications. To further advance this technology, we will focus on:

i) Optimizing V-doping concentration – We aim to determine the ideal V concentration that maximizes spin-switching efficiency while minimizing power consumption. By increasing V-doping above 0.5%, we expect to enhance Curie temperature (Tₓ) and stability, potentially pushing operational temperatures even higher while reducing energy requirements.

ii) Investigating few-layer spin-transfer torque (STT) devices – We will fabricate bilayer, trilayer, and multilayer V-doped WSe₂ devices to evaluate their room-temperature spin-switching behavior and assess their feasibility for ultralow-power operation.

iii) Exploring alternative magnetic dopants and co-dopants – We will investigate other transition metal dopants or co-doping strategies to fine-tune magnetic properties and optimize device performance.

iv) Scaling up spintronic device fabrication – We will develop wafer-scale integration of vdW-layered spintronic devices, providing a pathway for seamless replacement of conventional electronics with next-generation magnetic semiconductor technology.

If successfully realized, wafer-scale integration of room-temperature spintronic devices could revolutionize the semiconductor industry by enabling ultralow-power, high-speed, and non-volatile computing architectures. This breakthrough would outperform conventional charge-based electronics, paving the way for energy-efficient quantum and neuromorphic computing applications.