ICP etcher 2 (Atom Layer Etching, ALE)

• Model（GSE-S200）and company (NAURA, 北方华创), Location (Cleanroom)

   Superuser (Jingjing Lu/Qinke Wu), contacts (15377533309/wechat ID: miaomer_777、18428381656/wechat ID: wuqinke122832)

• Brief description: 

    This equipment enables low-damage etching with atomic-level precision on substrates such as silicon wafers, III-V compound semiconductors, metals, and dielectric materials. It is particularly suitable for: Etching of high-k dielectric/metal gates in advanced semiconductor nodes、three-dimensional structuring of micro-nano photonic devices、processing of fragile structures in MEMS device release processes. The ALE system employs two alternating, self-limiting reaction steps—surface modification (e.g., fluorination/chlorination) and desorption of volatile products—to achieve layer-by-layer atomic removal. Its core advantages include:Atomic-Level Etching Control: Etching depth is precisely regulated by the number of cycles, surpassing traditional plasma etching technologies.Non-Damaging Conformality: Ensures uniform etching even on complex 3D structures and nanoporous material surfaces, avoiding plasma-induced sidewall damage.

• Specifications:

    -Wafer size: <8’

    -Gas lines: 8 gas lines, including Ar/O₂/CF₄/SF₆/CHF₃/He/C₄F₆/N₂( or Cl2)

    -Etching Materials: SiO2, SiN, Polymer, III-V and etc.

    -RF generator: Top electode：13.56 MHz, 1500W（0.1W）-bottom electrode：13.56 MHz, 300W (Pulse controllable）

    -Uniformity: uniformity：uniformity：±4%（SiO₂）;  Low-damage（AlGaN <2nm）