CHN
Device Fabrication

E-beam lithography 2

Source:Institute of LQM      Author:宋兴娟    Published Date:2026-03-12    Views:

  • Model (Sigma300) and company (ZEISS), Location (Cleanroom)

    Superuser (Xingjuan Song), contacts (15527359929/wechat ID: juan921217826)

  • Brief description

Equipped with an electron beam lithography (EBL) system, this high-performance field emission scanning electron microscope (FE-SEM) facilitates direct, high-resolution patterning for advanced nanofabrication and rapid prototyping.

  • Specifications:

    - Image resolution: ≤0.7 nm (15 kV);≤1.1 nm (1 kV )

    - Beam energy range:  20eV-30keV

    - Magnification: ×10 to 1,000,000

    -Sample chamber internal dimensions: ≥360 mm (dia.) × 270 mm (H)

    -Loadable specimen size: 250mm(dia.)

    -Ultra-High Electron Gun Vacuum:10-7pa

    -NPGS pattern generator: digital signal processing speed 66MHz

    -Synchronous scan writing rate 5MHz

    -Lithography (guaranteed 20nm min. linewidth)


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