CHN
Device Fabrication

E-beam lithography 1

Source:Institute of LQM      Author:宋兴娟    Published Date:2026-03-12    Views:

  • Model (Pioneer) and company (Raith), Location (Cleanroom)

    Superuser (Xingjuan Song), contacts (15527359929/wechat ID: juan921217826)

  • Brief description

    It is mainly used for precise nanoscale fabrication and lithography on various substrates, such as semiconductors, nanomaterials, and 2D materials. It can achieve ultra-high resolution nanostructure patterning and accurate multi-layer alignment under high vacuum conditions.

  • Specifications:

    - Thermal Field Emission (TFE) Technology

    - Beam energy range:  0.02kV-30kV

    - World´s minimum beam size for sub 10nm

    -Lithography (guaranteed 8nm min. linewidth)

    -Variety of SE detectors for analytical SEM-imaging and

    -Advanced mark recognition

    - 20MHz Pattern Generator

    - Write field size is continuously variable from 0.5um-2mm

    -Proximity effect correction software package included



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