X-ray Diffractometer（XRD）

• Model (Smartlab, Thin Film Version, 9KW) and company (Rigaku), Location (Structural Characterization Room 1)

    Superuser (Xiang Xing), contacts (18040516270/wechat ID: yiyunjin16)

• Brief description: 

  XRD is primarily used for high-resolution X-ray analysis and structural characterization of crystals and epitaxial materials. It studies the crystallographic quality of semiconductor single-crystal materials and the structural properties of various low-dimensional semiconductor heterostructures. It monitors MBE (Molecular Beam Epitaxy) and MOCVD (Metal-Organic Chemical Vapor Deposition) heteroepitaxy processes, providing information on various structural parameters for optimal selection.

• Specifications

    -X-Ray Generator: Maximum output power: 9kW; Maximum tube voltage: 45kV; Maximum tube current: 200mA

    - Goniometer: θ/θ goniometer; Minimum step size: 0.0001 degrees (θd, θs); Goniometer radius: 300mm

    - Optical System: Divergence slit: Fully automated computer-controlled slit: 0.05-7mm, continuously adjustable; Soller slits on the incident and receiving sides: 2.5°

    - Multi-Functional Sample Stage (Eulerian Cradle): for thin film material testing, equipped with software for thin film reflectivity, rocking curve analysis, etc.

        χ-axis: -4.9° to 94.9° (minimum step size: 0.002°)

        φ-axis: ±360° (minimum step size: 0.005°)

    - In-Plane Axis: Capable of 2θχ scanning or 2θχ/φ scanning; Equipped with 0.5-degree In-Plane PSC slit

    - Two-Dimensional Semiconductor Detector: Number of sub-detectors: Over 290,000; Linear range: 2×10^11 cps; Capable of 0D, 1D, and 2D measurement modes, software-switchable; Equipped with fluorescence suppression mode; Capable of fast RSM measurements