Weekly Seminar 3: Low-Power Spin-Orbit Torque Materials for Next-Generation MRAM Devices

Dr. Yuejie Zhang

Adjunct Research Fellow,School of Integrated Circuits,
Huazhong University of Science and Technology

About the Speaker

Dr. Yuejie Zhang received his Ph.D. in Microelectronics and Solid-State Electronics from Huazhong University of Science and Technology. He conducted two years of postdoctoral research at Tsinghua University and later served as a Senior Researcher at the Central Research Institute of Midea Group.

His research focuses on spintronics, magnetic random-access memory (MRAM), quantum electronic devices, and advanced two-dimensional materials. He has published over 20 papers in top-tier journals including Nature Materials, Nature Communications, Science Advances, Advanced Materials, and Advanced Functional Materials. He serves as a reviewer for IEEE Electron Device Letters, Journal of Alloys and Compounds, and Journal of Magnetism and Magnetic Materials.

Seminar Details

Date: Thursday, May 15
Time: 14:30 – 16:00
Venue: 1st Floor, Building B, Innovation & Entrepreneurship Center

 Abstract

Magnetic random-access memory (MRAM) has emerged as a major research focus due to its fast read/write speed, high density, and low power consumption. Compared with conventional STT-MRAM, spin-orbit torque MRAM (SOT-MRAM) offers faster switching speed, lower power consumption, and longer endurance. The efficiency of spin-orbit torque is a critical factor in reducing power consumption and enabling high-density integration. This talk will discuss recent advances in low-power spin-orbit torque materials for next-generation MRAM devices.

  Key Topics

Spin-orbit torque (SOT) efficiency

Low-power SOT-MRAM devices

Advanced magnetic thin films

Quantum materials for spintronics

Audience

Open to students, researchers, and faculty. No prior expertise required.

Come curious, leave inspired. All are welcome!