Source：Institute of LQM Author：Heyang Li Published Date：2026-08-04 Views：
About the Speaker
Dr. Yuting Long received her Ph.D. from Wuhan University of Technology. She is a memberof the Hubei Provincial Quantum Information Science Society and the Hubei ProvinciaOptical Society.
Her main research focuses on quantum photonics including defect-bound electron-spin correlation dynamics in low-dimensional quantum materials. She has led and participated in one young talent project, two National Key R&D Program projects, one China-Africa Partnership Institute exchange project, two National Natural Science Foundation of China (NSFC) projects, and several provincial projects. She has contributed two chapters to the academic monograph, obtained three national invention patents, and published several SCl-indexed papers in international journals.
Seminar Details
Title: Defect Identification in vdW Layered Materials: Trap Centers Could Be Beneficial to Carrier Multiplication
Date: August 7, 2026
Time: 2:30 PM
Venue: 1st Floor, Seminar Room, Building B, Innovation and Entrepreneurship Center, HBUT
Abstract
Carrier multiplication and hot carrier extraction are two promising strategies for solar energy harvesting to go beyond the Shockley-Queisser (SQ) limit. In the carrier multiplication effect, by absorbing high-energy photons typically above twice the electronic bandgap, the photocarrier density is substantially increased, which enhances the short-circuit current and consequently raises the power conversion efficiency (PCE) limit to ~ 44%. However, a reduction of the carrier multiplication threshold below twice the electronic bandgap has been observed in some experimental results using vdW layered materials such as MoTe2. This phenomenon can be ascribed to trap centers that benefit carrier multiplication by reducing the required incident energy while keeping energy conservation. Identification of defects in vdW layered materials is essential to unveil the underlying mechanisms. Through defect engineering, defect identification and device fabrication, this challenge can be addressed, pushing next-generation solar cells toward a favorable efficiency limit for practical applications
This presentation will focus on the question of whether trap centers are beneficial to carrier multiplication. The speaker will introduce the background of hot-carrier solar cell with respect tocarrier multiplication, discuss the current status of threshold reduction utilizing defects, and outline the challenges and possible approaches to identify defects for the purpose of enhancing solar cell performance surpassing the S-Q limit.
Who Should Attend
Whether you are an undergraduate student, graduate student, postdoctor, faculty member, or simply someone fascinated by 2D materials, spintronics, or quantum physics — this seminar is for you. No prior expertise is required.
All backgrounds welcome
Open to everyone interested in research
Opportunity to ask questions and discuss science
Come curious, leave inspired. All are welcome!
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