Atomic Layer Deposition 1 and 2

• Model (150RH ) and company (Kemin), Location (Cleanroom)

    Superuser (Xingjuan Song), contacts (15527359929/wechat ID: juan921217826)

• Brief description: 

    ALD is a thin-film deposition technique based on sequential, self-limiting surface reactions. Precursor gases are pulsed into a chamber one at a time, each creating a single atomic layer. This process allows for precise, angstrom-level thickness control, producing exceptionally uniform and conformal coatings, ideal for semiconductor devices and advanced nanomaterials.

• Specifications:

    -Double-chamber vacuum structure

    -Ultra-high aspect ratio, which can exceed 100:1

    -Intra-chip non-uniformity ≤±1%@10nmAl2O3, 6 inches

    -Deposition Film options: Al2O3, HfO2, ZrO2, TiO2...