Scanning Tunneling Microscope（STM）

• Model (Dry-SPM) and company (CAS Acme), Location (Optical Room 2)

    Superuser (Shuxin Wang), contacts (15536260199/wehchat ID: a15536260199)

• Brief description:

       Scanning Tunneling Microscopy is a surface characterization technique capable of imaging conductive materials with atomic resolution. It operates based on the principle of Quantum Tunneling, where a tunneling current flows between a sharp conductive tip and the sample under an applied bias voltage, enabling precise mapping of surface topography and local electronic structure.

• Specifications

    - Base pressure: ≤8E-10 mbar≤1.1 nm (1 kV )

    - Temperature: ＜2 K (window unopened, no applied magnetic field.)

    - Cooling Time: 25 hours from room temperature to 2 K

    - Temperature Stability: ±5 mK in a constant-temperature laboratory

    - Temperature Drift: ≤150 pm/h

    - Magnetic field strength: ≤1 T

    - STM: atomic resolution on HOPG or Au(111) @ 2 K

    - qPlus AFM: atomic resolution on NaCl (100)/Si (111) @ 2 K