LecturerTel：
Email：lujingjing@hbut.edu.cn
IntroductionLu Jingjing, Lecturer at the School of Science, Hubei University of Technology. Her long-term research focuses on two-dimensional materials and multiferroic heterostructures, primarily exploring multi-physics field control of heterostructure devices and investigating the physical mechanisms of two-dimensional ferromagnetic/antiferromagnetic systems and their related devices.
Education Experience[1] 2013-09 to 2021-06, Huazhong University of Science and Technology, Microelectronics and Solid-State Electronics, PhD
[2] 2010-09 to 2013-04, Master of Materials Science, Fuzhou University
[3] 2005-09 to 2009-06, Wuhan University of Technology, Bachelor of Materials Science and Engineering
Work ExperienceAugust 2021–Present, Hubei University of Technology, School of Science, Lecturer
Semiconductor Physics and Devices
Semiconductor Chemistry
Microelectronics Process Technology（Theory and Experiment）
Micro-Nano Fabrication Technology
Two-dimensional materials, particularly two-dimensional ferromagnetic and antiferromagnetic materials, multiferroic heterostructures, and multiphysics-controlled heterostructure devices
[1] Jingjing Lu, Jingsong Cui, Yan Xu, Peng Zhang, Chenxi Zhou, Hanuman Singh, Shuai Zhang, Long You, Jeongmin Hong. Room temperature photosensitive ferromagnetic semiconductor using MoS2. npj Spintronics, 2024.
[2] Jingjing Lu, Zhenyu Guo, Wenzhao Wang, Jichang Lu, Yishuo Hu, Junhao Wang, Yonghong Xiao, Xiya Wang, Shibo Wang, Yufei Zhou and Xiangbin Zeng. Lateral monolayer MoS2 homojunction devices prepared by nitrogen plasma doping. Nanotechnology，vol. 32, no. 1, pp. 015701, 2021.
[3]Jingjing Lu, Xiya Wang, Junhao Wang, Yufei Zhou, Duo Chen, Shibo Wang, Maofa Zhang, Xiangbin Zeng. A Magentoelectric Coefficient Measurement System with a Free-Stress Sample Holder. Journal of Minerals and Materials Characterization and Engineering, vol. 8, pp, 330-340, 2020.
[4] Jingjing Lu, Changcheng Ma, Jing He, Jie Zhu, Zuoqi Hu. The enhanced electric field tunability of the microwave magnetoelectric effect in the YIG/Terfenol-D/PZT structure and its application. Physica B: Condensed Matter, vol. 566, pp. 116-120, 2019.
[5] Xinguo Ma, Huatin Bao, Xue Gong, Gang Yuan, Zhuo Peng, Jingjing Lu, Qihai Xie. Tunable Schottky barrier of WSi2N4/graphene heterostructure via interface distance and external electric field. Applied Surface Science, 2023, 615: 156385.
[6] Wenzhao Wang, Xiangbin Zeng, Jamie H. Warner, Zhengyu Guo, Yishuo Hu, Yang Zeng, Jingjing Lu, Wen Jin, Shibo Wang, Jichang Lu, Yirong Zeng, and Yonghong Xiao. Photoresponse-Bias Modulation of a High-Performance MoS2 Photodetector with a Unique Vertically Stacked 2H-MoS2/1T@2H-MoS2 Structure. ACS Applied Materials & Interfaces, vol. 12, no. 29, pp. 33325-33335, 2020.
[7] Wen Jin, Xiangbin Zeng, Zhenyu Guo, Yang Zeng, WenzhaoWang, Yirong Zeng, Yishuo Hu, Yonghong Xiao, Jichang Lu, Jingjing Lu and JunhaoWang, Optoelectronic properties of lateral MoS2 p-n homojunction implemented by selective p-type doping using nitrogen plasma. Journal of Physics D: Applied Physics, vol. 53, no. 40, pp. 405102, 2020.
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