来源：LQM中心 作者：Jie Xiong 发布：2026-04-21 点击量：
Dr. Yuejie Zhang
Adjunct Research Fellow,
School of Integrated Circuits,
Huazhong University of Science and Technology
About the Speaker
Dr. Yuejie Zhang received his Ph.D. in Microelectronics and Solid-State Electronics from Huazhong University of Science and Technology. He conducted two years of postdoctoral research at Tsinghua University and later served as a Senior Researcher at the Central Research Institute of Midea Group.
His research focuses on spintronics, magnetic random-access memory (MRAM), quantum electronic devices, and advanced two-dimensional materials. He has published over 20 papers in top-tier journals including Nature Materials, Nature Communications, Science Advances, Advanced Materials, and Advanced Functional Materials. He serves as a reviewer for IEEE Electron Device Letters, Journal of Alloys and Compounds, and Journal of Magnetism and Magnetic Materials.
Seminar Details
Date: Thursday, May 15
Time: 14:30 – 16:00
Venue: 1st Floor, Building B, Innovation & Entrepreneurship Center
Abstract
Magnetic random-access memory (MRAM) has emerged as a major research focus due to its fast read/write speed, high density, and low power consumption. Compared with conventional STT-MRAM, spin-orbit torque MRAM (SOT-MRAM) offers faster switching speed, lower power consumption, and longer endurance. The efficiency of spin-orbit torque is a critical factor in reducing power consumption and enabling high-density integration. This talk will discuss recent advances in low-power spin-orbit torque materials for next-generation MRAM devices.
Key Topics
Spin-orbit torque (SOT) efficiency
Low-power SOT-MRAM devices
Advanced magnetic thin films
Quantum materials for spintronics
Audience
Open to students, researchers, and faculty. No prior expertise required.
Come curious, leave inspired. All are welcome!
