半导体物理与器件、半导体化学、微电子工艺学、微纳加工技术

二维材料，尤其二维铁磁和反铁磁材料，多铁异质结及多物理场调控异质结器件

[1] Jingjing Lu, Jingsong Cui, Yan Xu, Peng Zhang, Chenxi Zhou, Hanuman Singh, Shuai Zhang, Long You, Jeongmin Hong. Room temperature photosensitive ferromagnetic semiconductor using MoS2. npj Spintronics, 2024.
[2] Jingjing Lu, Zhenyu Guo, Wenzhao Wang, Jichang Lu, Yishuo Hu, Junhao Wang, Yonghong Xiao, Xiya Wang, Shibo Wang, Yufei Zhou and Xiangbin Zeng. Lateral monolayer MoS2 homojunction devices prepared by nitrogen plasma doping. Nanotechnology，vol. 32, no. 1, pp. 015701, 2021.
[3]Jingjing Lu, Xiya Wang, Junhao Wang, Yufei Zhou, Duo Chen, Shibo Wang, Maofa Zhang, Xiangbin Zeng. A Magentoelectric Coefficient Measurement System with a Free-Stress Sample Holder. Journal of Minerals and Materials Characterization and Engineering, vol. 8, pp, 330-340, 2020.
[4] Jingjing Lu, Changcheng Ma, Jing He, Jie Zhu, Zuoqi Hu. The enhanced electric field tunability of the microwave magnetoelectric effect in the YIG/Terfenol-D/PZT structure and its application. Physica B: Condensed Matter, vol. 566, pp. 116-120, 2019.
[5] Xinguo Ma, Huatin Bao, Xue Gong, Gang Yuan, Zhuo Peng, Jingjing Lu, Qihai Xie. Tunable Schottky barrier of WSi2N4/graphene heterostructure via interface distance and external electric field. Applied Surface Science, 2023, 615: 156385.
[6] Wenzhao Wang, Xiangbin Zeng, Jamie H. Warner, Zhengyu Guo, Yishuo Hu, Yang Zeng, Jingjing Lu, Wen Jin, Shibo Wang, Jichang Lu, Yirong Zeng, and Yonghong Xiao. Photoresponse-Bias Modulation of a High-Performance MoS2 Photodetector with a Unique Vertically Stacked 2H-MoS2/1T@2H-MoS2 Structure. ACS Applied Materials & Interfaces, vol. 12, no. 29, pp. 33325-33335, 2020.
[7] Wen Jin, Xiangbin Zeng, Zhenyu Guo, Yang Zeng, WenzhaoWang, Yirong Zeng, Yishuo Hu, Yonghong Xiao, Jichang Lu, Jingjing Lu and JunhaoWang, Optoelectronic properties of lateral MoS2 p-n homojunction implemented by selective p-type doping using nitrogen plasma. Journal of Physics D: Applied Physics, vol. 53, no. 40, pp. 405102, 2020.