副教授电话：
邮箱：pal.dipayan@hbut.edu.cn
概况Dr. Dipayan Pal is an Associate Professor at the Institute of Low-Dimensional Quantum Materials, School of Materials Science and Chemical Engineering, Hubei University of Technology, where his research sits at the frontier of next-generation semiconductor materials and device technologies. He received his Ph.D. in Materials Science from the Indian Institute of Technology Indore, India, where he established deep expertise in atomic layer deposition (ALD), thin-film growth, and the interface engineering of functional oxides. He subsequently broadened his international research profile through postdoctoral appointments at Sungkyunkwan University, South Korea, and the University of California San Diego, USA, leading programmes supported by Samsung Electronics and the Semiconductor Research Corporation (SRC), USA.
His work spans ALD-grown high-k dielectrics for gate-stack and interface engineering, vapor-deposited metal–organic framework films for low-k dielectric gap fill, low-dimensional semiconductors, and inverse hybrid metal bonding for 3D heterogeneous integration – a portfolio that runs from fundamental materials chemistry through to the practical demands of logic, memory, and advanced packaging. Dr. Pal has authored more than 30 peer-reviewed publications and holds several U.S. patents, reflecting a sustained record of both scientific and translational contribution.
At HBUT, he is working on the high-performance 2D semiconductors – MoS₂, WSe₂ and related systems – alongside ALD-based high-k dielectric integration, targeting ultra-low-power CMOS logic, RF circuits, and 3D heterogeneous integration.
教育经验(1) Ph.D. in Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, India; July 2014 to November 2019.
(2) Master of Science in Physics, Indian Institute of Technology Hyderabad, India; July 2012 to May 2014.
(3) Bachelor of Science in Physics, University of Calcutta, India; July 2009 to July 2012.
工作经验(1) Associate Professor, Institute of Low-Dimensional Quantum Materials, School of Materials and Chemical Engineering, Hubei University of Technology; March 2026 to Present.
(2) Postdoctoral Scholar Employee at University of California San Diego, USA; June 2023 to December 2025.
(3) Postdoc Researcher at Sungkyunkwan University, South Korea; June 2022 to May 2023.
(4) Research Associate-I at Centre for Nano and Soft Matter Sciences, India; March 2021 to May 2022.
(5) Institute Post-Doctoral Fellow at Indian Institute of Technology Indore, India; June 2019 to June 2020.
Low-dimensional semiconductor materials; ALD high-k dielectrics; thin-film growth and interface engineering; next-generation 2D semiconductors for ultra-low-power CMOS logic, RF, and 3D integration.
A. Selected Publications:
1. D. Pal*, J. Dutta, D. C. Mora, J. Mu, X. Wang, D. Go, A. E. Ross, A. C. Kummel, “Grain-Size Engineering in Vapor-Deposited ZIF‑8 MOF: Low-Leakage Low‑k Films with Enhanced Breakdown Field”, ACS Applied Materials & Interfaces, 2026, (doi.org/10.1021/acsami.6c00629).
2. C-H Kuo, J. Dutta, H. Ko, D. Pal, M. Manley, R. Sahay, D. Baig, M. Bakir, C. H. Winter, C. V. Thompson, A. C. Kummel, “Cyclic Oxidation–Reduction Cleaning for Microstructural and Chemical Restoration of Copper after Chemical Mechanical Polishing”, ACS Applied Electronic Materials 8, 1588, 2026, (doi.org/10.1021/acsaelm.5c02225).
3. J. Mu, X. Wang, J. Huang, C. H. Winter, K. Wang, D. Pal, P-C Lee, D. C. Mora, J. Dutta, A. Yadav, K. Wong, S. Nemani, E. Yieh, A. C. Kummel, “Air-Stable Low Dielectric Constant SiOx/AlOx Nanolaminate Films Deposited by Thermal Pulsed Chemical Vapor Deposition with Continuous Carbon Doping For Interlayer Dielectric” ACS Applied Nano Materials 8, 16926, 2025 (doi.org/10.1021/acsanm.5c03189)
4. D. Pal*, N. Yang, H. Simka, J. Dutta, K. Wang, J. Mu, P-C Lee, X. Wang, C. H. Winter, and A. C. Kummel, “Vapor-deposited MOF for low-k dielectric seamless high-aspect-ratio interconnect gap fill”, ACS Applied Materials & Interfaces 17, 14682, 2025, (doi.org/10.1021/acsami.4c20795).
5. P-C Lee, A. J. McLeod, M. Choi, D. Vaca, D. C. Mora, K. Wang, S. Yun, J. Dutta, D. Pal, S. Kumar, A. C. Kummel, “Achieving a High Thermally Conductive One Micron AlN Deposition by High Power Impulse Magnetron Sputtering plus Kick”, ACS Applied Materials & Interfaces 16, 26664, 2024, (doi.org/10.1021/acsami.4c00993).
6. R. Rathod, S. Kapse, D. Pal, M. R. Das, R. Thapa, P. K. Santra, “Restricting Anion Migrations by Atomic Layer-Deposited Alumina on Perovskite Nanocrystals while Preserving Structural and Optical Properties”, Chemistry of Materials 36, 1719, 2024, (doi.org/10.1021/acs.chemmater.3c03113).
7. R. Roy, M. K. Ganesha, P. Dutta, D. Pal, A. K. Singh, “High-Performance Aqueous Electrochromic Battery for Smart Window Application: Mechanistic Insights of Al-Ion (De) Intercalation Kinetics in Thickness-Optimized WO3”, ACS Applied Energy Materials 6, 11683, 2023 (doi.org/10.1021/acsaem.3c02237).
8. D. Pal, A. Mathur, A. Singh, S. Pakhira, R. Singh, S. Chattopadhyay, “Binder-Free ZnO Cathode synthesized via ALD by Direct Growth of Hierarchical ZnO Nanostructure on Current Collector for High-Performance Rechargeable Aluminium-Ion Batteries”, ChemistrySelect 3, 12512, 2018, (doi.org/10.1002/slct.201803517).
9. D. Pal, J. Singhal, A. Mathur, A. Singh, S. Dutta, S. Zollner, S. Chattopadhyay, “Effect of Substrates and Thickness on Optical Properties in Atomic Layer Deposition Grown ZnO Thin Films”, Applied Surface Science 421, 341, 2017, (doi.org/10.1016/j.apsusc.2016.10.130).
10. D. Pal, A. Mathur, A. Singh, J. Singhal, A. Sengupta, S. Dutta, S. Zollner, S. Chattopadhyay, “Tunable Optical Properties in Atomic Layer Deposition grown ZnO Thin Films”, Journal of Vacuum Science & Technology A 35, 01B108, 2017, (doi.org/10.1116/1.4967296).
11. A. Mathur, S. B. Dutta, D. Pal, J. Singhal, A. Singh, S. Chattopadhyay, “High Efficiency Epitaxial-Graphene/Silicon-Carbide Photocatalyst with Tunable Photocatalytic Activity and Bandgap Narrowing”, Advanced Materials Interfaces 3, 1600413, 2016, (doi.org/10.1002/admi.201600413).
B. Patents:
1. D. Pal, N. Yang, A. C. Kummel, H. Simka, J. Watson, “A Rapid Process For Vapor-Deposited ZIF-8 Metal Organic Framework (MOF) For Low-K Dielectric Seamless High Aspect Ratio Gap Fill”, U.S. Patent Application No. 19/048,574.
2. R. Sahay, M. Manley, A. Victor, M. Bakir, D. Pal, C-H Kuo, A. C. Kummel, H. Simka, 2024, “Inverse Hybrid Bonding”, U.S. Patent Application No. 19/221,312.
3. J. Mu, X. Wang, D. Pal, Jit Dutta, A. C. Kummel, K. Wong, S. Nemani, M. Breeden, E. Yieh, “Integration-Compatible Low-k SiAlOx Dielectric for Conformal Deposition and Void-Free Gap Fill”, U.S. Patent Application No. 63/934,703.
1. Award of INSPIRE Scholarship during Bachelor and Master from Department of Science & Technology (DST), Government of India, 2009 to 2014.
2. Award of Teaching Assistant (TA) Fellowship for Ph.D. from Ministry of Human Resource Development (MHRD), Government of India, 2014 to 2018.
3. Research fellow at Semiconductor Research Corporation (SRC), USA, June 2023 to December 2025.
4. Samsung fellowship at UC San Diego, USA, from June 2023 to December 2025.
5. Working as peer reviewer for several international Physics and Materials Science related journals.
